| 1 |
Separation of americium from europium using 3,3-dimethoxy-phenyl-bis-1,2,4-triazinyl-2,6-pyridine
Hill TG, Chin AL, Tai S, Carrick JD, Ensor DD, Delmau LH
Separation Science and Technology, 53(12), 1848, 2018 |
| 2 |
Solvent extraction of perrhenate ions with podand-type nitrogen donor ligands
Ogata T, Takeshita K, Tsuda K, Mori A
Separation and Purification Technology, 68(2), 288, 2009 |
| 3 |
Effective-mass theory of shallow donors in 4H-SIC
Ivanov IG, Stelmach A, Kleverman M, Janzen E
Materials Science Forum, 483, 511, 2005 |
| 4 |
On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC
Weingartner R, Wellmann PJ, Winnacker A
Materials Science Forum, 457-460, 645, 2004 |
| 5 |
The biphasic regioselective hydrogenation of benzo[b]thiophene and quinoline catalyzed by Ru(II) species, deriving from the water soluble phosphine TPPTS (tris-meta-sulfonato-phenylphosphine) and stabilized by nitrogen donor ligands
Busolo MA, Lopez-Linares F, Andriollo A, Paez DE
Journal of Molecular Catalysis A-Chemical, 189(2), 211, 2002 |
| 6 |
Influence of junction potential distribution on effective impurity ionization time constants in SiC for admittance spectroscopy data analysis
Los AV, Mazzola MS
Materials Science Forum, 389-3, 545, 2002 |
| 7 |
Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC
Weingartner R, Bickermann M, Herro Z, Kunecke U, Sakwe SA, Wellmann PJ, Winnacker A
Materials Science Forum, 433-4, 333, 2002 |
| 8 |
Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC
Weingartner R, Albrecht A, Wellmann PJ, Winnacker A
Materials Science Forum, 433-4, 341, 2002 |
| 9 |
Shallow nitrogen donor states in 4H-SiC investigated by photothermal ionization spectroscopy
Chen CQ, Zeman J, Engelbrecht F, Peppermuller C, Helbig R, Martinez G
Materials Science Forum, 338-3, 611, 2000 |
| 10 |
Theoretical study of carrier freeze-out effects on admittance spectroscopy and frequency-dependent C-V measurements in SiC
Los AV, Mazzola MS, Saddow SE
Materials Science Forum, 338-3, 745, 2000 |
