검색결과 : 9건
No. | Article |
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1 |
Reduction of nonradiative recombination in InGaN epilayers grown with periodical dilute hydrogen carrier gas Wang HL, Lv ZS, Chen C, Zhang SP, Guo Y, Li B, Wu ZS, Jiang H Applied Surface Science, 494, 285, 2019 |
2 |
Solvent engineering of LiTFSI towards high-efficiency planar perovskite solar cells Zou JJ, Wu JH, Sun WH, Zhang MJ, Wang XB, Yuan PQ, Zhu QJ, Yin J, Liu XP, Yang YQ Solar Energy, 194, 321, 2019 |
3 |
Photothermal deflection technique investigation of thermal annealing effects of AlGaAsSb/GaSb laser structure: Non-radiative recombination parameters enhancement Ilahi S, Yacoubi N, Genty F Materials Research Bulletin, 106, 332, 2018 |
4 |
Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers Podlipskas Z, Aleksiejunas R, Nargelas S, Jurkevicius J, Mickevicius J, Kadys A, Tamulaitis G, Shur MS, Shatalov M, Yang JW, Gaska R Current Applied Physics, 16(6), 633, 2016 |
5 |
An artificial nonradiative recombination center model created by use of a Si1-xGex/Si quantum-well-inserted pseudomorphic superlattice Terada Y, Yasutake Y, Fukatsu S Thin Solid Films, 520(8), 3365, 2012 |
6 |
Nonradiative recombination and band bending of p-Si(100) surfaces during electrochemical deposition of polycrystalline ZnO Rappich J, Fahoume M Thin Solid Films, 487(1-2), 157, 2005 |
7 |
Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes Cao XA, LeBoeuf SF, Kim KH, Sandvik PM, Stokes EB, Ebong A, Walker D, Kretchmer J, Lin JY, Jiang HX Solid-State Electronics, 46(12), 2291, 2002 |
8 |
Spectroscopic discrimination of non-radiative centers in quantum wells by two wavelength excited photoluminescence Ocampo JM, Kamata N, Hoshino K, Hirasawa M, Yamada K, Nishioka M, Arakawa Y Journal of Crystal Growth, 210(1-3), 238, 2000 |
9 |
Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with iron Surkova TP, Kaczor P, Zakrzewski AJ, Swiatek K, Ivanov VY, Godlewski M, Polimeni A, Eaves L, Giriat W Journal of Crystal Growth, 214, 576, 2000 |