검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Electrical properties of metal-oxide-semiconductor capacitors using liquid-phase deposited silicon-dioxide gate dielectric on sulfur-passivated germanium Hwang JD, Lin DS, Lin YL, Chang WT, Yang GH Thin Solid Films, 519(2), 833, 2010 |
| 2 |
SOI technology characterization using SOI-MOS capacitor Sonnenberg V, Martino JA Solid-State Electronics, 49(1), 109, 2005 |
| 3 |
Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC Yang BL, Lin LM, Lo HB, Lai PT Solid-State Electronics, 49(7), 1223, 2005 |
| 4 |
Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices Nicolett AS, Martino JA, Simoen E, Claeys C Solid-State Electronics, 46(9), 1381, 2002 |