검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Investigation of charge trapping and breakdown characteristics of sputtered-Y2O3 on n-GaAs substrates Das PS, Biswas A Thin Solid Films, 520(1), 47, 2011 |
| 2 |
Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers Bera MK, Mahata C, Bhattacharya S, Chakraborty AK, Armstrong BM, Gamble HS, Maiti CK Applied Surface Science, 255(5), 2971, 2008 |
| 3 |
Reliability of ultra-thin titanium dioxide (TiO(2)) films on strained-Si Bera MK, Mahata C, Maiti CX Thin Solid Films, 517(1), 27, 2008 |
| 4 |
The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement Uang KM, Wang SJ, Chen SL, Chen TM, Liou BW Thin Solid Films, 515(4), 2501, 2006 |
| 5 |
High-reliability ONO gate dielectric for power MOSFETs Tanimoto S, Tanaka H, Hayashi T, Shimoida Y, Hoshi M, Mihara T Materials Science Forum, 483, 677, 2005 |
| 6 |
Recent advances in (0001) 4H-SiC MOS device technology Das MK Materials Science Forum, 457-460, 1275, 2004 |
| 7 |
Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics Lee SC, Simoen E, Badenes G Solid-State Electronics, 48(9), 1687, 2004 |
| 8 |
A new edge termination technique for SiC power devices Hu ST, Sheng K Solid-State Electronics, 48(10-11), 1861, 2004 |
| 9 |
Ultra-thin gate oxide reliability projections Weir BE, Alam MA, Silverman PJ, Baumann F, Monroe D, Bude JD, Timp GL, Hamad A, Ma Y, Brown MM, Hwang D, Sorsch TW, Ghetti A, Wilk GD Solid-State Electronics, 46(3), 321, 2002 |
| 10 |
Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides Wu E, Sune J, Lai W, Nowak E, McKenna J, Vayshenker A, Harmon D Solid-State Electronics, 46(11), 1787, 2002 |