화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 The impact of stress-induced defects on MOS electrostatics and short-channel effects
Esqueda IS
Solid-State Electronics, 103, 167, 2015
2 A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits
Esqueda IS, Barnaby HJ
Solid-State Electronics, 91, 81, 2014
3 Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs
Aleksic SM, Jaksic AB, Pejovic MM
Solid-State Electronics, 52(8), 1197, 2008
4 Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing
Ristic GS, Pejovic MM, Jaksic AB
Applied Surface Science, 252(8), 3023, 2006
5 Fowler-Nordheim high electric field stress of power VDMOSFETs
Ristic GS, Pejovic MM, Jaksic AB
Solid-State Electronics, 49(7), 1140, 2005
6 Modelling of radiation response of p-channel SiC MOSFETs
Lee KK, Ohshima T, Itoh H
Materials Science Forum, 433-4, 761, 2002