화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide
Furno M, Bonani F, Ghione G
Solid-State Electronics, 51(3), 466, 2007
2 Electrical transport properties of n-type 4H and 6H silicon carbide
Contreras S, Pernot J
Materials Science Forum, 457-460, 555, 2004
3 A new depletion dependent analytical model for sheet carrier density of InAlAs/InGaAs heterostructure, InP based HEMT
Gupta R, Gupta M, Gupta RS
Solid-State Electronics, 47(1), 33, 2003