화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Numerical simulation of the temperature distribution in a planetary MOCVD reactor
Tsai ML, Fang CC, Lee LY
Chemical Engineering and Processing, 81, 48, 2014
2 The Nearest Uniformity Producing Profile (NUPP) optimization criterion for thin-film processing applications
Adomaitis RA
Journal of Process Control, 18(10), 922, 2008
3 Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors
Dauelsberg M, Martin C, Protzmann H, Boyd AR, Thrush EJ, Kappeler J, Heuken M, Talalaev RA, Yakovlev EV, Kondratyev AV
Journal of Crystal Growth, 298, 418, 2007
4 Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor (R)
Martin C, Dauelsberg M, Protzmann H, Boyd AR, Thrush EJ, Heuken M, Talalaev RA, Yakovlev EV, Kondratyev AV
Journal of Crystal Growth, 303(1), 318, 2007
5 Modelling and simulation of MOVPE of GaAs-based compound semiconductors in production scale Planetary Reactors
Brien D, Dauelsberg M, Christiansen K, Hofeldt J, Deufel M, Heuken M
Journal of Crystal Growth, 303(1), 330, 2007
6 Effects of reactor pressure and residence time on GaN MOVPE growth efficiency
Lundin WV, Zavarin EE, Sizov DS, Sinitsin MA, Tsatsul'nikov AF, Kondratyev AV, Yakovlev EV, Talalaev RA
Journal of Crystal Growth, 287(2), 605, 2006
7 Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study
Kondratyev AV, Talalaev RA, Lundin WV, Sakharov AV, Tsatsul'nikov AV, Zavarin EE, Fomin AV, Sizov DS
Journal of Crystal Growth, 272(1-4), 420, 2004
8 Real time monitoring of layer growth on planetary reactor((R)) by reflectance-anisotropy-spectroscopy
Habets N, Schmitt T, Deufel M, Lunenburger M, Heuken M, Juergensen H
Thin Solid Films, 409(1), 43, 2002