검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating Sugawara K, Sakuraba M, Murota J Thin Solid Films, 518, S57, 2010 |
| 2 |
Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD Sugawara K, Sakuraba M, Murota J Thin Solid Films, 508(1-2), 143, 2006 |
| 3 |
Growth kinetics of hydrogenated amorphous silicon carbide films by RF plasma-enhanced CVD using two kinds of source materials Kaneko T, Miyakawa N, Sone H, Yamazaki H Thin Solid Films, 409(1), 74, 2002 |