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The mechanism study of mixed Ar/O-2 plasma-cleaning treatment on niobium surface for work function improvement Zhang ZY, Ye ZB, Wang ZJ, Gou FJ, Shen BZ, Wu AD, He Y, He PN, Wang HB, Chen B, Chen JJ, Zhang K, Wei JJ Applied Surface Science, 475, 143, 2019 |
2 |
Formation and reduction of thin oxide films on a stainless steel surface upon subsequent treatments with oxygen and hydrogen plasma Mozetic M, Vesel A, Kovac J, Zaplotnik R, Modic M, Balat-Pichelin M Thin Solid Films, 591, 186, 2015 |
3 |
Reduction of Oxide Minerals by Hydrogen Plasma: An Overview Sabat KC, Rajput P, Paramguru RK, Bhoi B, Mishra BK Plasma Chemistry and Plasma Processing, 34(1), 1, 2014 |
4 |
Time dependent statistics of plasma discharge parameters during bulk AC plasma electrolytic oxidation of aluminium Dunleavy S, Curran JA, Clyne TW Applied Surface Science, 268, 397, 2013 |
5 |
Combination of RF-plasma jet and Laser-induced plasma for breakdown spectroscopy analysis of complex materials Pedarnig JD, Heitz J, Ionita ER, Dinescu G, Praher B, Viskup R Applied Surface Science, 257(12), 5452, 2011 |
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Influences of oxide material on high density plasma production using capacitively coupled discharge Ohtsu Y, Shimazoe I, Misawa I, Fujita H Thin Solid Films, 506, 545, 2006 |
7 |
Effect of time-varying axial magnetic field on high aspect ratio contact hole etching Song HY, Choi YH, O BH, Park SG, Oh JS, Kim JW Thin Solid Films, 435(1-2), 247, 2003 |
8 |
Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers Ray SK, Maikap S, Samanta SK, Banerjee SK, Maiti CK Solid-State Electronics, 45(11), 1951, 2001 |
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In situ cleaning of GaAs and AlxGa1-xAs surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge Kagadei VA, Proskurovsky DI Journal of Vacuum Science & Technology A, 17(4), 1488, 1999 |
10 |
Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment Sekine K, Saito Y, Hirayama M, Ohmi T Journal of Vacuum Science & Technology A, 17(5), 3129, 1999 |