화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 The mechanism study of mixed Ar/O-2 plasma-cleaning treatment on niobium surface for work function improvement
Zhang ZY, Ye ZB, Wang ZJ, Gou FJ, Shen BZ, Wu AD, He Y, He PN, Wang HB, Chen B, Chen JJ, Zhang K, Wei JJ
Applied Surface Science, 475, 143, 2019
2 Formation and reduction of thin oxide films on a stainless steel surface upon subsequent treatments with oxygen and hydrogen plasma
Mozetic M, Vesel A, Kovac J, Zaplotnik R, Modic M, Balat-Pichelin M
Thin Solid Films, 591, 186, 2015
3 Reduction of Oxide Minerals by Hydrogen Plasma: An Overview
Sabat KC, Rajput P, Paramguru RK, Bhoi B, Mishra BK
Plasma Chemistry and Plasma Processing, 34(1), 1, 2014
4 Time dependent statistics of plasma discharge parameters during bulk AC plasma electrolytic oxidation of aluminium
Dunleavy S, Curran JA, Clyne TW
Applied Surface Science, 268, 397, 2013
5 Combination of RF-plasma jet and Laser-induced plasma for breakdown spectroscopy analysis of complex materials
Pedarnig JD, Heitz J, Ionita ER, Dinescu G, Praher B, Viskup R
Applied Surface Science, 257(12), 5452, 2011
6 Influences of oxide material on high density plasma production using capacitively coupled discharge
Ohtsu Y, Shimazoe I, Misawa I, Fujita H
Thin Solid Films, 506, 545, 2006
7 Effect of time-varying axial magnetic field on high aspect ratio contact hole etching
Song HY, Choi YH, O BH, Park SG, Oh JS, Kim JW
Thin Solid Films, 435(1-2), 247, 2003
8 Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers
Ray SK, Maikap S, Samanta SK, Banerjee SK, Maiti CK
Solid-State Electronics, 45(11), 1951, 2001
9 In situ cleaning of GaAs and AlxGa1-xAs surfaces and production of ohmic contacts using an atomic hydrogen source based on a reflected arc discharge
Kagadei VA, Proskurovsky DI
Journal of Vacuum Science & Technology A, 17(4), 1488, 1999
10 Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment
Sekine K, Saito Y, Hirayama M, Ohmi T
Journal of Vacuum Science & Technology A, 17(5), 3129, 1999