화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Improvement of process parameters for polycrystalline silicon carbide low pressure chemical vapor deposition on 150 mm silicon substrate using monomethylsilane as precursor
Ajayakumar A, Maruthoor S, Fuchs T, Rohlfing F, Jakovlev O, Wilde J, Reinecke H
Thin Solid Films, 536, 94, 2013
2 Growth and characterization of SiC layers obtained by microwave-CVD
Mandracci P, Ferrero S, Cicero G, Giorgis F, Pirri CF, Barucca G, Reitano R, Musumeci P, Calcagno L, Foti G
Thin Solid Films, 383(1-2), 169, 2001
3 SiC MEMS: opportunities and challenges for applications in harsh environments
Mehregany M, Zorman CA
Thin Solid Films, 355-356, 518, 1999