화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Spontaneous polarization of 4H SiC determined from optical emissions of 4H/3C/4H-SiC quantum wells
Bai S, Devaty RP, Choyke WJ, Kaiser U, Wagner G, MacMillan MF
Materials Science Forum, 457-460, 573, 2004
2 Theoretical study of cubic polytype inclusions in 4H-SiC
Iwata H, Lindefelt U, Oberg S, Briddon PR
Materials Science Forum, 389-3, 533, 2002
3 Effective mass of electrons in quantum-well-like stacking-fault gap states in silicon carbide
Iwata H, Lindefelt U, Oberg S, Briddon PR
Materials Science Forum, 433-4, 519, 2002
4 Stacking fault - Stacking fault interactions and cubic inclusions in 6H-SiC: an ab initio study
Iwata H, Lindefelt U, Oberg S, Briddon PR
Materials Science Forum, 433-4, 921, 2002