| 1 |
Investigation of Photoluminescence and Annealing Effect of PS Layers
Han CS, Park KW, Kim SW
Korean Journal of Materials Research, 28(2), 124, 2018 |
| 2 |
Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanadium oxide treatment
Derbali L, Ezzaouia H
Applied Surface Science, 271, 234, 2013 |
| 3 |
Homogeneous luminescent stain etched porous silicon elaborated by a new multi-step stain etching method
Hajji M, Khalifa M, Ben Slama S, Ezzaouia H
Applied Surface Science, 284, 324, 2013 |
| 4 |
Correlation between reflectivity and photoluminescent properties of porous silicon films
Verma D, Khan F, Singh SN, Singh PK
Solar Energy Materials and Solar Cells, 95(1), 30, 2011 |
| 5 |
Estimation of oxide related electron trap energy of porous silicon nanostructures
Das MM, Ray M, Bandyopadhyay NR, Hossain SM
Materials Chemistry and Physics, 119(3), 524, 2010 |
| 6 |
The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time
Zhao Y, Lv ZY, Li Z, Liang XY, Min JH, Wang LJ, Shi WM, Liu YY
Solid-State Electronics, 54(4), 452, 2010 |
| 7 |
Electroless deposition of bismuth on Si(111) wafer from hydrogen fluoride solutions
Romann T, Anderson E, Kallip S, Mandar H, Matisen L, Lust E
Thin Solid Films, 518(14), 3690, 2010 |
| 8 |
Luminescence properties of Ammonium Silicon Fluoride films prepared by vapour etching technique
Yilmaz M, Kabacelik I, Cicek A, Ulug A, Ulug B
Thin Solid Films, 518(1), 49, 2009 |
| 9 |
Method of controlling spontaneous emission from porous silicon fabricated using pulsed current etching
Ali NK, Hashim MR, Aziz AA, Hamammu I
Solid-State Electronics, 52(2), 249, 2008 |
| 10 |
Silicon nano-crystalline structures fabricated by a sequential plasma hydrogenation and annealing technique
Abdi Y, Hashemi P, Erzadeh SM, Jamei M, Robertson MD, Bums MJ, MacLachlan JM
Thin Solid Films, 516(10), 3172, 2008 |
