검색결과 : 15건
No. | Article |
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1 |
Operating principles and practical design aspects of all SiC DC/AC/DC converter for MPPT in grid-connected PV supplies Ozturk S, Popos P, Utalay V, Koc A, Ermis M, Cadirci I Solar Energy, 176, 380, 2018 |
2 |
Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics Kyoung S, Hong YS, Lee MH, Nam TJ Solid-State Electronics, 140, 23, 2018 |
3 |
Analysis of the reverse recovery oscillation of superjunction MOSFET body diode Xue P, Fu GC Solid-State Electronics, 129, 81, 2017 |
4 |
Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor Bansal A, Kumar MJ Current Applied Physics, 15(10), 1130, 2015 |
5 |
Physics-based stability analysis of MOS transistors Ferrara A, Steeneken PG, Boksteen BK, Heringa A, Scholten AJ, Schmitz J, Hueting RJE Solid-State Electronics, 113, 28, 2015 |
6 |
Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations Marek J, Chvala A, Donoval D, Pribytny P, Molnar M, Mikolasek M Solid-State Electronics, 94, 44, 2014 |
7 |
Numerical simulation and modeling of thermal transient in silicon power devices Magnone P, Fiegna C, Greco G, Bazzano G, Rinaudo S, Sangiorgi E Solid-State Electronics, 88, 69, 2013 |
8 |
Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement Reggiani S, Denison M, Gnani E, Gnudi A, Baccarani G, Pendharkar S, Wise R Solid-State Electronics, 54(9), 950, 2010 |
9 |
Challenges in SiC power MOSFET design Matocha K Solid-State Electronics, 52(10), 1631, 2008 |
10 |
Excimer laser annealing for shallow junction formation in SI power MOS devices Fortunato G, Privitera V, La Magna A, Mariucci L, Cuscuna M, Svensson BG, Monakhov E, Camalleri M, Magri A, Salinas D, Simon F Thin Solid Films, 504(1-2), 2, 2006 |