검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
A high efficiency C-band internally-matched harmonic tuning GaN power amplifier Lu Y, Zhao BC, Zheng JX, Zhang HS, Zheng XF, Ma XH, Hao Y, Ma PJ Solid-State Electronics, 123, 96, 2016 |
| 2 |
High PAE high reliability AlN/GaN double heterostructure Medjdoub F, Zegaoui M, Linge A, Grimbert B, Silvestri R, Meneghini M, Meneghesso G, Zanoni E Solid-State Electronics, 113, 49, 2015 |
| 3 |
Power added efficiency and linearity tradeoffs in GaN and GaAs microwave power HEMTs Okayama T, Rao MV Solid-State Electronics, 54(3), 294, 2010 |
| 4 |
Single-transistor latch-up and large-signal reliability in SOI CMOS RF power transistors Carrara F, Presti CD, Scuderi A, Palmisano G Solid-State Electronics, 54(9), 957, 2010 |
| 5 |
High performance SiGe HBT power unit-cell for S-Band open collector adaptive bias power amplifier design Chiou HK, Yeh PC, Lin KC Solid-State Electronics, 52(2), 239, 2008 |
| 6 |
A fully integrated 2.4 GHz class-E amplifier with a 63% PAE by 0.18 mu m CMOS technologies Ho CC, Kuo CW, Hsiao CC, Chan YJ Solid-State Electronics, 48(1), 99, 2004 |
| 7 |
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, Jenkins TJ, Yannuzi MJ, Via GD, Crespo A Solid-State Electronics, 47(10), 1781, 2003 |
| 8 |
A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits Honjo K Solid-State Electronics, 44(8), 1477, 2000 |