검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Gain measurement of terahertz quantum cascade laser via a master-oscillator power-amplifier configuration Yu CR, Zhu H, Wang FF, Chang GL, Zhu HQ, Chen JX, Xu GY, He L Journal of Crystal Growth, 514, 98, 2019 |
| 2 |
2.5 GHz integrated graphene RF power amplifier on SiC substrate Hanna T, Deltimple N, Khenissa MS, Pallecchi E, Happy H, Fregonese S Solid-State Electronics, 127, 26, 2017 |
| 3 |
An ultra-wideband CMOS PA with dummy filling for reliability Chang YT, Ye Y, Xu HT, Domier C, Luhmann NC, Gu QJ Solid-State Electronics, 129, 125, 2017 |
| 4 |
Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects Jarndal A, Ghannouchi FM Solid-State Electronics, 123, 19, 2016 |
| 5 |
A high efficiency C-band internally-matched harmonic tuning GaN power amplifier Lu Y, Zhao BC, Zheng JX, Zhang HS, Zheng XF, Ma XH, Hao Y, Ma PJ Solid-State Electronics, 123, 96, 2016 |
| 6 |
W-band differential power amplifier design in 45 nm low power CMOS Deferm N, Osorio JF, de Graauw A, Reynaert P Solid-State Electronics, 82, 41, 2013 |
| 7 |
AlGaN/GaN power amplifiers for ISM applications Krausse D, Benkhelifa F, Reiner R, Quay R, Ambacher O Solid-State Electronics, 74, 108, 2012 |
| 8 |
A C-band GaN based linear power amplifier with 55.7% PAE Luo WJ, Chen XJ, Zhang H, Liu GG, Zheng YK, Liu XY Solid-State Electronics, 54(4), 457, 2010 |
| 9 |
Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design Jarndal A, Aflaki P, Degachi L, Birafane A, Kouki A, Negra R, Ghannouchi FM Solid-State Electronics, 54(7), 696, 2010 |
| 10 |
Single-transistor latch-up and large-signal reliability in SOI CMOS RF power transistors Carrara F, Presti CD, Scuderi A, Palmisano G Solid-State Electronics, 54(9), 957, 2010 |