검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Physical study of the avalanche breakdown phenomenon in HEMTs Elkhou M, Rousseau M, Gerard H, De Jaeger JC Solid-State Electronics, 49(4), 535, 2005 |
| 2 |
The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices Cao X, Zeng YP, Kong MY, Pan L, Wang BQ, Zhu ZP Solid-State Electronics, 45(5), 751, 2001 |
| 3 |
Fabrication of Y-Gate, Submicron Gate Length GaAs Metal-Semiconductor Field-Effect Transistors Ren F, Pearton SJ, Lothian JR, Abernathy CR Journal of Vacuum Science & Technology B, 11(6), 2603, 1993 |