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| No. | Article |
|---|---|
| 1 |
Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes Hartmann JM, Damlencourt JF, Bogumilowicz Y, Holliger P, Rolland G, Billon T Journal of Crystal Growth, 274(1-2), 90, 2005 |