검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
The influence of interface roughness on the normal incident absorption of quantum-well infrared photodetectors Chou ST, Lin SY, Yu BN, Shyue JJ, Tseng CC, Chen CN, Wu MC, Lin W Thin Solid Films, 517(5), 1799, 2009 |
| 2 |
Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure Park J, Jo SJ, Hong S, Song JI Solid-State Electronics, 46(5), 651, 2002 |
| 3 |
The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors Li N, Fu L, Li N, Chan YC, Lu W, Shen SC, Tan HH, Jagadish C Journal of Crystal Growth, 222(4), 786, 2001 |