화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions
Dixit A, Anil KG, Rooyackers R, Leys F, Kaiser M, Collaert N, De Meyer K, Jurczak M, Biesemans S
Solid-State Electronics, 50(4), 587, 2006
2 Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs
An X, Huang R, Zhang X, Wang YY
Solid-State Electronics, 49(3), 479, 2005
3 Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy
Waite AM, Lloyd NS, Osman K, Zhang W, Ernst T, Achard H, Wang Y, Deleonibus S, Hernment PLF, Bagnall DM, Evans AGR, Ashburn P
Solid-State Electronics, 49(4), 529, 2005
4 Effects of contamination on selective epitaxial growth
MacDonald BJ, Paton E, Adem E, En B
Applied Surface Science, 231-2, 776, 2004