검색결과 : 4건
No. | Article |
---|---|
1 |
Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions Dixit A, Anil KG, Rooyackers R, Leys F, Kaiser M, Collaert N, De Meyer K, Jurczak M, Biesemans S Solid-State Electronics, 50(4), 587, 2006 |
2 |
Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs An X, Huang R, Zhang X, Wang YY Solid-State Electronics, 49(3), 479, 2005 |
3 |
Raised source/drains for 50 nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy Waite AM, Lloyd NS, Osman K, Zhang W, Ernst T, Achard H, Wang Y, Deleonibus S, Hernment PLF, Bagnall DM, Evans AGR, Ashburn P Solid-State Electronics, 49(4), 529, 2005 |
4 |
Effects of contamination on selective epitaxial growth MacDonald BJ, Paton E, Adem E, En B Applied Surface Science, 231-2, 776, 2004 |