검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Effects of high-concentration phosphorus doping on crystal quality and lattice strain in SiGeHBTs Oda K, Miura M, Shimamoto H, Washio K Applied Surface Science, 254(19), 6017, 2008 |
| 2 |
Precise control of doping profile and crystal quality improvement of SiGe HBTs using continuous epitaxial growth technology Oda K, Miura M, Shimamoto H, Washio K Thin Solid Films, 517(1), 98, 2008 |