| 1 |
Ti 쇼트키 배리어 다이오드의 Al 확산 방지를 위한 SC-1 세정 효과
최진석, 최여진, 안성진
Korean Journal of Materials Research, 31(2), 97, 2021 |
| 2 |
A macro model of RF Schottky diode in 22-nm CMOS and its application
Xu C, Yu PP, Jiang YF
Solid-State Electronics, 154, 7, 2019 |
| 3 |
Improving performance of device made up of CuO nanoparticles synthesized by hydrothermal over the reflux method
Jana R, Dey A, Das M, Datta J, Das P, Ray PP
Applied Surface Science, 452, 155, 2018 |
| 4 |
Application of CaCu3Ti4O12 based quadruple perovskites as a promising candidate for optoelectronic devices
Pal K, Jana R, Dey A, Ray PP, Seikh MM, Gayen A
Chemical Physics Letters, 699, 229, 2018 |
| 5 |
Performance analysis of Fe-doped calcium copper titanate quadruple perovskite in optoelectronic device
Pal K, Jana R, Dey A, Ray PP, Seikh MM, Gayen A
Chemical Physics Letters, 709, 110, 2018 |
| 6 |
Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1-1.5 THz
Jenabi S, Malekabadi A, Deslandes D, Boone F, Charlebois SA
Solid-State Electronics, 134, 65, 2017 |
| 7 |
Manipulating the structure of polyaniline by exploiting redox chemistry: Novel p-NiO/n-polyaniline/n-Si Schottky diode based chemosensor for the electrochemical detection of hydrazinobenzene
Ameen S, Akhtar MS, Shin HS
Electrochimica Acta, 215, 200, 2016 |
| 8 |
Spectral sensitivity of graphene/silicon heterojunction photodetectors
Riazimehr S, Bablich A, Schneider D, Kataria S, Passi V, Yim C, Duesberg GS, Lemme MC
Solid-State Electronics, 115, 207, 2016 |
| 9 |
Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer
Woo H, Lee J, Jo Y, Han J, Kim J, Kim H, Roh CH, Lee JH, Park J, Hahn CK, Im H
Current Applied Physics, 15(9), 1027, 2015 |
| 10 |
High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O-2 treatment
Seok O, Han MK, Byun YC, Kim J, Shin HC, Ha MW
Solid-State Electronics, 103, 49, 2015 |
