검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy Wu ZL, Chen P, Yang GF, Xu Z, Xu F, Jiang FL, Zhang R, Zheng YD Applied Surface Science, 331, 444, 2015 |
| 2 |
Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets Feng W, Kuryatkov VV, Nikishin SA, Holtz M Journal of Crystal Growth, 312(10), 1717, 2010 |
| 3 |
Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy Heiss M, Riedlberger E, Spirkoska D, Bichler M, Abstrelter G, Fontcuberta i Morral A Journal of Crystal Growth, 310(6), 1049, 2008 |
| 4 |
The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor Forbes DV, Corbett PB, Hansen DM, Goodnough TJ, Zhang L, Myli K, Yeh JY, Mawst L Journal of Crystal Growth, 261(2-3), 427, 2004 |
| 5 |
Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth Elarde VC, Yeoh TS, Rangarajan R, Coleman JJ Journal of Crystal Growth, 272(1-4), 148, 2004 |
| 6 |
Shadow mask technology Schallenberg T, Schumacher C, Gundel S, Faschinger W Thin Solid Films, 412(1-2), 24, 2002 |
| 7 |
Selective-area epitaxial growth of GaAs in deep dielectric windows using molecular beam epitaxy Loke WK, Yoon SF, Zheng HQ Journal of Crystal Growth, 222(1-2), 44, 2001 |
| 8 |
Compact Metalorganic Molecular-Beam Epitaxy Growth System Hamm RA, Ritter D, Temkin H Journal of Vacuum Science & Technology A, 12(5), 2790, 1994 |