검색결과 : 2건
No. | Article |
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1 |
Control of growth process and dislocation generation of GaAs1-xNx grown by all-solid-source molecular beam epitaxy Fujimoto Y, Yonezu H, Momose K, Utsumi A, Furukawa Y Journal of Crystal Growth, 227, 491, 2001 |
2 |
Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasers emitting at 980 nm Klopf F, Reithmaier JP, Forchel A Journal of Crystal Growth, 227, 1151, 2001 |