검색결과 : 238건
| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(111)B Henksmeier T, Shvarkov S, Trapp A, Reuter D Journal of Crystal Growth, 512, 164, 2019 |
| 2 |
Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V Matsumoto K, Ubukata A, Piao GX, Yano Y, Tabuchi T, Koseki S, Sodabanlu H, Watanabe K, Nakano Y, Sugiyama M Journal of Crystal Growth, 507, 134, 2019 |
| 3 |
An algorithm for the in situ analysis of optical reflectance anisotropy spectra Ortega-Gallegos J, Lastras-Martinez A, Guevara-Macias LE, Garcia JGS, Ariza-Flores D, Castro-Garcia R, Lopez-Estopier RE, Balderas-Navarro RE, Lastras-Martinez LF Journal of Crystal Growth, 515, 9, 2019 |
| 4 |
X-ray photoelectron spectroscopy study of Ga nanodroplet on silica-terminated silicon surface for nanowire growth Fouquat L, Vettori M, Botella C, Benamrouche A, Penuelas J, Grenet G Journal of Crystal Growth, 514, 83, 2019 |
| 5 |
Overcoming Ehrlich-Schwobel barrier in (111)A GaAs molecular beam epitaxy Ritzmann J, Schott R, Gross K, Reuter D, Ludwig A, Wieck AD Journal of Crystal Growth, 481, 7, 2018 |
| 6 |
Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applications Hamon G, Paillet N, Alvarez J, Larrue A, Decobert J Journal of Crystal Growth, 498, 301, 2018 |
| 7 |
Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length Kupers H, Bastiman F, Luna E, Somaschini C, Geelhaar L Journal of Crystal Growth, 459, 43, 2017 |
| 8 |
MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications Fuchs C, Beyer A, Volz K, Stolz W Journal of Crystal Growth, 464, 201, 2017 |
| 9 |
Strain relaxation and compositional separation during growth of InGaAs/GaAs(001) Deki R, Sasaki T, Takahasi M Journal of Crystal Growth, 468, 241, 2017 |
| 10 |
Donor-deactivating defects above the equilibrium doping limit in GaAs: Te, Ge and GaAs: Te studied by annealing and Hall effect under pressure Slupinski T, Wasik D, Przybytek J Journal of Crystal Growth, 468, 433, 2017 |