검색결과 : 264건
| No. | Article |
|---|---|
| 1 |
Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy Ramesh C, Tyagi P, Abhiram G, Gupta G, Kumar MS, Kushvaha SS Journal of Crystal Growth, 509, 23, 2019 |
| 2 |
Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates Feng QJ, Li TT, Li F, Li YZ, Shi B, Gao C, Wang DY, Liang HW Journal of Crystal Growth, 509, 91, 2019 |
| 3 |
Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge Tajima J, Hikosaka T, Kuraguchi M, Nunoue S Journal of Crystal Growth, 509, 129, 2019 |
| 4 |
Analysis of the structural, anisotropic elastic and electronic properties of beta-Ga2O3 with various pressures Luan SZ, Dong LP, Jia RX Journal of Crystal Growth, 505, 74, 2019 |
| 5 |
Real-time monitoring and control of nitride growth rates by Metal Modulated Epitaxy Averett KL, Hatch JB, Eyink KG, Bowers CT, Mahalingam K Journal of Crystal Growth, 517, 12, 2019 |
| 6 |
Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy Eftychis S, Kruse JE, Tsagaraki K, Koukoula T, Kehagias T, Komninou P, Georgakilas A Journal of Crystal Growth, 514, 89, 2019 |
| 7 |
alpha-Ga2O3 grown by low temperature atomic layer deposition on sapphire Roberts JW, Jarman JC, Johnstone DN, Midgley PA, Chalker PR, Oliver RA, Massabuau FCP Journal of Crystal Growth, 487, 23, 2018 |
| 8 |
Structure, phase composition, and some properties of melt grown GaSe:Er crystals Borisenko EB, Timonina AV, Borisenko DN, Nikolaichik VI, Tereshchenko AN, Kolesnikov NN Journal of Crystal Growth, 496, 64, 2018 |
| 9 |
Growth of III-N/graphene heterostructures in single vapor phase epitaxial process Lundin WV, Zavarin EE, Sakharov AV, Zakheim DA, Davydov VY, Smirnov AN, Eliseyev IA, Yagovkina MA, Brunkov PN, Lundina EY, Markov LK, Tsatsulnikov AF Journal of Crystal Growth, 504, 1, 2018 |
| 10 |
X-ray characterization technique for the assessment of surface damage in GaN wafers Letts E, Sun YM, Key D, Jordan B, Hashimoto T Journal of Crystal Growth, 501, 13, 2018 |