검색결과 : 23건
| No. | Article |
|---|---|
| 1 |
Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique Shi YG, Yang JF, Liu HL, Dai PY, Liu BB, Jin ZH, Qiao GJ, Li HL Journal of Crystal Growth, 349(1), 68, 2012 |
| 2 |
Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC Krishnan B, Kotamraju S, Thirumalai RVKG, Koshka Y Journal of Crystal Growth, 321(1), 8, 2011 |
| 3 |
Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors Kotamraju S, Krishnan B, Melnychuk G, Koshka Y Journal of Crystal Growth, 312(5), 645, 2010 |
| 4 |
Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC Das H, Melnychuk G, Koshka Y Journal of Crystal Growth, 312(12-13), 1912, 2010 |
| 5 |
Epitaxial growth of 4H-SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation Koshka Y, Lin HD, Melnychuk G, Wood C Journal of Crystal Growth, 294(2), 260, 2006 |
| 6 |
Liquid phase homoepitaxial growth of 6H-SiC on (0 1 (1)over-bar 5) oriented substrates Filip O, Epelbaum B, Herro ZG, Bickermann M, Winnacker A Journal of Crystal Growth, 282(3-4), 286, 2005 |
| 7 |
LPE of silicon carbide using diluted Si-Ge flux Filip O, Epelbaum B, Bickermann M, Winnacker A Materials Science Forum, 483, 133, 2005 |
| 8 |
In situ growth of SiC nanowires on RS-SiC substrate(s) Yang W, Araki H, Hu QL, Ishikawa N, Suzuki H, Noda T Journal of Crystal Growth, 264(1-3), 278, 2004 |
| 9 |
Modeling of facet formation in SiC bulk crystal growth Matukov ID, Kalinin DS, Bogdanov MV, Karpov SY, Ofengeim DK, Ramm MS, Barash JS, Mokhov EN, Roenkov AD, Vodakov YA, Ramm MG, Helava H, Makarov YN Journal of Crystal Growth, 266(1-3), 313, 2004 |
| 10 |
Micropipe healing in SiC wafers by liquid-phase epitaxy in Si-Ge melts Filip O, Epelbaum B, Bickermann M, Winnacker A Journal of Crystal Growth, 271(1-2), 142, 2004 |