검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Solution growth of n-type beta-FeSi2 single crystals using Ni-doped Zn solvent Udono H, Aoki Y, Suzuki H, Kikuma I Journal of Crystal Growth, 292(2), 290, 2006 |
| 2 |
Low-temperature homoepitaxial growth of alpha-SiC on on-axis (0001) substrate by vapor-liquid-solid mechanism Soueidan M, Ferro G, Nsouli B, Cauwet F, Mollet L, Jacquier C, Younes G, Monteil Y Journal of Crystal Growth, 293(2), 433, 2006 |
| 3 |
Growth and fundamental properties of SiGe bulk crystals Yonenaga I Journal of Crystal Growth, 275(1-2), 91, 2005 |
| 4 |
Growth of SiC-C nanocables on SiO2 films derived by gaseous composition control using Ti Lee KH, Seo WS, Lee Y, Lee MH, Song SJ, Sigmund W Journal of Crystal Growth, 281(2-4), 556, 2005 |
| 5 |
SiC hornoepitaxy on Al-ion-implanted layers for fabricating power device structures Imaizumi M, Tanimura J, Tarui Y, Sugimoto H, Ohtsuka K, Takami T, Ozeki T Journal of Crystal Growth, 237, 1219, 2002 |