| 1 |
Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth
Puustinen J, Hilska J, Guina M
Journal of Crystal Growth, 511, 33, 2019 |
| 2 |
Zinc blende and wurtzite crystal structure formation in gold catalyzed InGaAs nanowires
Johansson J, Leshchenko ED
Journal of Crystal Growth, 509, 118, 2019 |
| 3 |
Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
Miyoshi M, Yamanaka M, Egawa T, Takeuchi T
Journal of Crystal Growth, 506, 40, 2019 |
| 4 |
Epitaxial phases of high Bi content GaSbBi alloys
Hilska J, Koivusalo E, Puustinen J, Suomalainen S, Guina M
Journal of Crystal Growth, 516, 67, 2019 |
| 5 |
Strain study of epitaxial Al1-xGaxN based on first-principles theory
Jin S, Li XF, Yang WX, Bian LF, Lu SL
Journal of Crystal Growth, 514, 60, 2019 |
| 6 |
MBE growth of continuously-graded parabolic quantum well arrays in AlGaAs
Deimert C, Wasilewski ZR
Journal of Crystal Growth, 514, 103, 2019 |
| 7 |
Regrown source/drain in InGaAs multi-gate MOSFETs
Miyamoto Y, Kanazawad T, Kise N, Kinoshita H, Ohsawa K
Journal of Crystal Growth, 522, 11, 2019 |
| 8 |
Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition
Wang X, Chen ZW, Hu CY, Saito K, Tanaka T, Nishio M, Guo QX
Journal of Crystal Growth, 483, 39, 2018 |
| 9 |
Investigation on synthesis, growth, structure and physical properties of AgGa0.5In0.5S2 single crystals for Mid-IR application
Karunagaran N, Ramasamy P
Journal of Crystal Growth, 483, 169, 2018 |
| 10 |
Control of conduction type in ferromagnetic (Zn,Sn,Mn)As-2 thin films by changing Mn content and effect of annealing on thin films with n-type conduction
Minamizawa Y, Kitazawa T, Hidaka S, Toyota H, Nakamura S, Uchitomi N
Journal of Crystal Growth, 487, 34, 2018 |
