| 1 |
Interfacial properties of two-dimensional graphene/ZrS2 and ScS2/ZrS2 contacts
Wang XL, Quhe RG, Liu Z, Zhi YS, Tang YN, Dai XQ, Wu ZP, Tang WH
Applied Surface Science, 476, 778, 2019 |
| 2 |
Highly ordered copper oxide (Cu2O) nanopillar arrays using template assisted electrodeposition technique and their temperature dependent electrical characteristics
Venkatesan A, Kannan ES
Current Applied Physics, 17(5), 806, 2017 |
| 3 |
Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell
Soylu M, Yakuphanoglu F
Thin Solid Films, 519(6), 1950, 2011 |
| 4 |
Stability and phase transition studies of Ga-pWSe(2) Schottky diode by current-voltage-temperature method
Mathai AJ, Patel KD, Srivastava R
Thin Solid Films, 518(10), 2695, 2010 |
| 5 |
Studies on In-pWSe(2) Schottky diode by current-voltage-temperature method
Mathai AJ, Patel KD, Srivastava R
Thin Solid Films, 518(15), 4417, 2010 |
| 6 |
Current-voltage and capacitance-voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact
Yakuphanoglu F, Kandaz M, Senkal BF
Thin Solid Films, 516(23), 8793, 2008 |
| 7 |
High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application
Tran CA, Chu CF, Cheng CC, Liu WH, Chu JY, Cheng HC, Fan FH, Yen JK, Doan T
Journal of Crystal Growth, 298, 722, 2007 |
| 8 |
Temperature dependence of the current-voltage characteristics of the Al/Rhodamine-101/p-Si(100) contacts
Karatas S, Temirci C, Cakar M, Turut A
Applied Surface Science, 252(6), 2209, 2006 |
| 9 |
Series resistance influence on intersecting behaviour of inhomogeneous Schottky diodes I-V curves
Osvald J
Solid-State Electronics, 50(2), 228, 2006 |
| 10 |
Formation and characterization of electric contacts on CVD diamond films prepared by ion implantation
Kovach G, Csorbai H, Dobos G, Karacs A, Petol G
Materials Science Forum, 473-474, 123, 2005 |
