화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Consistent low-field mobility modeling for advanced MOS devices
Stanojevic Z, Baumgartner O, Filipovic L, Kosina H, Karner M, Kernstock C, Prause P
Solid-State Electronics, 112, 37, 2015
2 Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches
Sato-Iwanaga J, Inoue A, Sorada H, Takagi T, Rothschild A, Loo R, Biesemans S, Ito C, Liu Y, Dutton RW, Tsuchiya H
Solid-State Electronics, 91, 1, 2014
3 Electrical stability in self-aligned p-channel polysilicon thin film transistors
Gaucci P, Mariucci L, Valletta A, Pecora A, Fortunato G, Templier F
Thin Solid Films, 515(19), 7571, 2007
4 Detailed modelling of photon recycling: application to GaAs solar cells
Balenzategui JL, Marti A
Solar Energy Materials and Solar Cells, 90(7-8), 1068, 2006
5 A modified transferred-electron high-field mobility model for GaN devices simulation
Turin VO
Solid-State Electronics, 49(10), 1678, 2005
6 Levelized incomplete LU method and its application to semiconductor device simulation
Tsai YT, Lee CY, Tsai MK
Solid-State Electronics, 44(6), 1069, 2000