검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
A reliable method to grow vertically-aligned silicon nanowires by a novel ramp-cooling process Ho TW, Hong FCN Applied Surface Science, 258(20), 7989, 2012 |
| 2 |
Fabrication and Photoelectrochemical Behavior of Ordered CIGS Nanowire Arrays for Application in Solar Cells Inguanta R, Livreri P, Piazza S, Sunseri C Electrochemical and Solid State Letters, 13(3), K22, 2010 |
| 3 |
Heteroepitaxial Growth and Faceting of Ge Nanowires on Si(111) by Electron-Beam Evaporation Pecora EF, Irrera A, Artoni P, Boninelli S, Bongiorno C, Spinella C, Priolo F Electrochemical and Solid State Letters, 13(5), K53, 2010 |
| 4 |
Photoconductive Enhancement of Single-Layer Tin Oxide-Coated ZnO Nanowires Lin CC, Chen YW, Chiang MC, Lee CH, Tung YL, Chen SY Journal of the Electrochemical Society, 157(2), H227, 2010 |
| 5 |
A Lateral ZnO Nanowire Photodetector Prepared on Glass Substrate Weng WY, Chang SJ, Hsu CL, Hsueh TJ, Chang SP Journal of the Electrochemical Society, 157(2), K30, 2010 |
| 6 |
Enhancement of GaN Nanowires Synthesis with a Controlled Diameter by Using Au Nanoparticles on Plasma-Activated Si Substrate Lee KH, Lo PL, Liao JD, Chen IG Journal of the Electrochemical Society, 157(4), K84, 2010 |
| 7 |
The Growth of GaN Nanorods with Different Temperature by Molecular Beam Epitaxy Hsu KY, Wang CY, Liu CP Journal of the Electrochemical Society, 157(5), K109, 2010 |
| 8 |
Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching Kallesoe C, Molhave K, Larsen KF, Engstrom D, Hansen TM, Boggild P, Martensson T, Borgstrom M, Samuelson L Journal of Vacuum Science & Technology B, 28(1), 21, 2010 |
| 9 |
General theoretical model for the vapor-phase growth and growth rate of semiconductor nanowires Mohammad SN Journal of Vacuum Science & Technology B, 28(2), 329, 2010 |
| 10 |
Mn-induced growth of InAs nanowires Jabeen F, Piccin M, Felisari L, Grillo V, Bais G, Rubini S, Martelli F, d'Acapito F, Rovezzi M, Boscherini F Journal of Vacuum Science & Technology B, 28(3), 478, 2010 |