| 1 |
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources
Begotti M, Longo M, Magnanini R, Parisini A, Tarricone L, Bocchi C, Germini F, Lazzarini L, Nasi L, Geddo M
Applied Surface Science, 222(1-4), 423, 2004 |
| 2 |
Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy
Yoshikane T, Urakami A, Koizumi A, Hisadome S, Tabuchi M, Inoue K, Fujiwara Y, Takeda Y
Applied Surface Science, 237(1-4), 246, 2004 |
| 3 |
Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy
Koizumi A, Fujiwara Y, Inoue K, Yoshikane T, Urakami A, Takeda Y
Applied Surface Science, 216(1-4), 560, 2003 |
| 4 |
Ab-Initio Study of Stacking Interactions in A-DNA and B-DNA
Alhambra C, Luque FJ, Gago F, Orozco M
Journal of Physical Chemistry B, 101(19), 3846, 1997 |
| 5 |
Nucleic-Acid Structures, Energetics, and Dynamics
Tinoco I
Journal of Physical Chemistry, 100(31), 13311, 1996 |
