검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Silicon interband tunneling diodes with high peak-to-valley ratios Oehme M Thin Solid Films, 520(8), 3341, 2012 |
| 2 |
Thickness-dependent structural transition in GaAs nanocrystals grown on Si (111) surface Yasuda H, Matsumoto K, Furukawa T, Imamura M, Nitta N, Mori H Journal of Crystal Growth, 314(1), 365, 2011 |
| 3 |
Antimony doped Si Esaki diodes without post growth annealing Oehme M, Kirfel O, Werner J, Kaschel M, Kasper E, Schulze J Thin Solid Films, 518, S65, 2010 |
| 4 |
Investigations of the structural, optical, and electrical properties of Pb0.8Sn0.2Te layers grown on Si(100) using BaF2/CaF2 buffer Ostertak D, Friedrich M, Velichko A, Ilyushin V, Zahn DRT Thin Solid Films, 517(16), 4599, 2009 |
| 5 |
Relaxed germanium films on silicon (110) Wietler TF, Bugiel E, Hofmann KR Thin Solid Films, 517(1), 272, 2008 |
| 6 |
Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001) Wietler TF, Bugiel E, Hofmann KR Thin Solid Films, 508(1-2), 6, 2006 |
| 7 |
Surfactant enhanced growth of thin Si films on CaF2/Si(111) Wang CR, Muller BH, Bugiel E, Hofmann KR Applied Surface Science, 211(1-4), 203, 2003 |
| 8 |
STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer Oberbeck L, Hallam T, Curson NJ, Simmons MY, Clark RG Applied Surface Science, 212, 319, 2003 |
| 9 |
RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence Tok ES, Woods NJ, Zhang J Journal of Crystal Growth, 209(2-3), 321, 2000 |
| 10 |
Carbon segregation in silicon Oehme M, Bauer M, Parry CP, Eifler G, Kasper E Thin Solid Films, 380(1-2), 75, 2000 |