검색결과 : 2건
No. | Article |
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1 |
Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions Bae MS, Yun I Solid-State Electronics, 156, 48, 2019 |
2 |
Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs: Analytical model and design considerations Kranti A, Armstrong GA Solid-State Electronics, 50(3), 437, 2006 |