검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Analysis of graphitization during physical vapor transport growth of silicon carbide Wellmann PJ, Herro Z, Sakwe SA, Masri P, Bogdanov M, Karpov S, Kulik A, Ramm M, Makarov Y Materials Science Forum, 457-460, 55, 2004 |
| 2 |
'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging Wellmann PJ, Herro Z, Straubinger TL, Winnacker A Materials Science Forum, 389-3, 91, 2002 |
| 3 |
Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling Wellmann PJ, Herro Z, Selder M, Durst F, Pusche R, Hundhausen M, Ley L, Winnacker A Materials Science Forum, 433-4, 9, 2002 |
| 4 |
Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process Wellmann PJ, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A Materials Science Forum, 353-356, 11, 2001 |