| 1 |
Prediction and experimental determination of the layer thickness in SIMS depth profiling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing
Lian SY, Kim KJ, Kim TG, Hofmann S, Wang JY
Applied Surface Science, 481, 1103, 2019 |
| 2 |
Depth resolution and preferential sputtering in depth profiling of sharp interfaces
Hofmann S, Han YS, Wang JY
Applied Surface Science, 410, 354, 2017 |
| 3 |
Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry
Drozdov MN, Drozdov YN, Csik A, Novikov AV, Vad K, Yunin PA, Yurasov DV, Belykh SF, Gololobov GP, Suvorov DV, Tolstogouzov A
Thin Solid Films, 607, 25, 2016 |
| 4 |
TOF-SIMS study on surface modification of reed switch blades by pulsing nitrogen plasma
Arushanov KA, Drozdov MN, Karabanov SM, Zeltser IA, Tolstogouzov A
Applied Surface Science, 265, 642, 2013 |
| 5 |
Influence of non-Gaussian roughness on sputter depth profiles
Liu Y, Jian W, Wang JY, Hofmann S, Kovac J
Applied Surface Science, 276, 447, 2013 |
| 6 |
Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques
Ber B, Babor P, Brunkov PN, Chapon P, Drozdov MN, Duda R, Kazantsev D, Polkovnikov VN, Yunin P, Tolstogouzov A
Thin Solid Films, 540, 96, 2013 |
| 7 |
Improved sputter depth resolution in Auger thin film analysis using in situ low angle cross-sections
Scheithauer U
Applied Surface Science, 179(1-4), 20, 2001 |
