| 1 |
Effect of gate insulating layer on organic static induction transistor characteristics
Pu F, Watanabe Y, Yamauchi H, Nakamura M, Kudo K
Thin Solid Films, 518(2), 514, 2009 |
| 2 |
A novel method of hydrogen generation by water electrolysis using an ultra-short-pulse power supply
Shimizu N, Hotta S, Sekiya T, Oda O
Journal of Applied Electrochemistry, 36(4), 419, 2006 |
| 3 |
Simulation of GaN and AlGaN static induction transistors
Alptekin E, Aktas O
Solid-State Electronics, 50(5), 741, 2006 |
| 4 |
High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators
Shimizu N, Miyoshi M, Tange S, Sekiya T, Ito T, Sakuma T, Sakurai T, Terasawa T, Hatano M, Hotta S, Imanishi Y, Okimoto A, Asai M, Oda O, Nishizawa J
Solid-State Electronics, 50(9-10), 1567, 2006 |
| 5 |
Fabrication of organic static induction transistors with higher order structures
Mathew JC, Hirashima N, Nakamura M, Iizuka M, Kudo K
Applied Surface Science, 244(1-4), 603, 2005 |
| 6 |
Organic light emitting transistors
Kudo K
Current Applied Physics, 5(4), 337, 2005 |
| 7 |
Performance of lateral SOI-MOS static induction transistors for RF power applications
Yano K, Mitsumori A, Furuya M, Kasuga M
Solid-State Electronics, 49(7), 1233, 2005 |
| 8 |
Dependence of I-V characteristics on structural parameters of static induction transistor
Wang YS, Li SY, Hu DQ
Solid-State Electronics, 48(1), 55, 2004 |
| 9 |
Opportunities and technical strategies for silicon carbide device development
Cooper JA
Materials Science Forum, 389-3, 15, 2002 |
| 10 |
A review of SiC static induction transistor development for high-frequency power amplifiers
Sung YM, Casady JB, Dufrene JB, Agarwal AK
Solid-State Electronics, 46(5), 605, 2002 |
