검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Step flow growth of Mn5Ge3 films on Ge(111) at room temperature Petit M, Boussadi A, Heresanu V, Ranguis A, Michez L Applied Surface Science, 480, 529, 2019 |
| 2 |
Effect of nucleation on instability of step meandering during step-flow growth on vicinal 3C-SiC (0001) surfaces Li Y, Chen XJ, Su J Journal of Crystal Growth, 468, 28, 2017 |
| 3 |
Study on formation of step bunching on 6H-SiC (0001) surface by kinetic Monte Carlo method Li Y, Chen XJ, Su J Applied Surface Science, 371, 242, 2016 |
| 4 |
Misorientation-angle dependence of boron incorporation into (001)-oriented chemical-vapor-deposited (CVD) diamond Ogura M, Kato H, Makino T, Okushi H, Yamasaki S Journal of Crystal Growth, 317(1), 60, 2011 |
| 5 |
Surface morphology of homoepitaxial beta-Ga2O3 thin films grown by molecular beam epitaxy Oshima T, Arai N, Suzuki N, Ohira S, Fujita S Thin Solid Films, 516(17), 5768, 2008 |
| 6 |
Transmission electron microscopy of Ba0.7Sr0.3TiO3/YBa2Cu3O7-delta epitaxial films on (001) SrTiO3 substrates Qi XY, Yang H, Kong X, Hu GQ, Duan XF, Zhao BR Journal of Crystal Growth, 262(1-4), 353, 2004 |
| 7 |
Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C-60 and Si effusion cells Lampert WV, Eiting CJ, Smith SA, Mahalingam K, Grazulis L, Haas TW Journal of Crystal Growth, 234(2-3), 369, 2002 |
| 8 |
Bending of basal-plane dislocations in VPE grown 4H-SiC epitaxial layers Ha S, Mieszkowski P, Rowland LB, Skowronski M Materials Science Forum, 389-3, 231, 2002 |
| 9 |
Seed surface preparation for SiC sublimation growth Pelissier B, Moulin C, Pernot E, Anikin M, Grosse P, Faure C, Ferrand B, Couchaud M, Basset G, Madar R Materials Science Forum, 338-3, 47, 2000 |
| 10 |
Comparison of AlGaN and GaN grown on various substrates: Step flow growth on LiGaO2 at low growth temperature Kang S, Doolittle WA, Stock SR, Brown AS Materials Science Forum, 338-3, 1499, 2000 |