검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Asymmetrically strained all-silicon multi-gate n-Tunnel FETs Najmzadeh M, Boucart K, Riess W, Ionescu AM Solid-State Electronics, 54(9), 935, 2010 |
| 2 |
Characterization of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy Nakajima K, Joumori S, Suzuki M, Kimura K, Osipowicz T, Tok KL, Zheng JZ, See A, Zhang BC Applied Surface Science, 237(1-4), 416, 2004 |