검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Investigating and modeling impact ionization current in MOSFETs Chau Q Solid-State Electronics, 94, 66, 2014 |
| 2 |
Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress Kuo YJ, Chang TC, Yeh PH, Chen SC, Dai CH, Chao CH, Young TF, Cheng O, Huang CT Thin Solid Films, 517(5), 1715, 2009 |
| 3 |
Substrate current characterization and optimization of high voltage LDMOS transistors Wang J, Li R, Dong YM, Zou X, Shao L, Shiau WT Solid-State Electronics, 52(6), 886, 2008 |
| 4 |
An improved substrate current model for ultra-thin gate oxide MOSFETs Yang LA, Hao Y, Yu CL, Han FY Solid-State Electronics, 50(3), 489, 2006 |
| 5 |
Study of leakage-induced photon emission processes in sub-90 nm CMOS devices Weizman Y, Gurfinkel M, Margulis A, Fefer Y, Shapira Y, Baruch E Solid-State Electronics, 50(6), 920, 2006 |
| 6 |
Study of hot-carrier-induced photon emission from 90 nm Si MOSFETs Gurfinkel M, Borenshtein M, Margulis A, Sade S, Fefer Y, Weizman Y, Shapira Y Applied Surface Science, 248(1-4), 62, 2005 |
| 7 |
A new LIGBT structure to suppress substrate currents in a junction isolated technology Bakeroot B, Doutreloigne J, Moens P Solid-State Electronics, 49(3), 363, 2005 |
| 8 |
Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices Cui Z, Liou JJ, Yue Y, Wong H Solid-State Electronics, 49(3), 505, 2005 |
| 9 |
A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region Aggarwal SK, Gupta R, Haldar S, Gupta M, Gupta RS Solid-State Electronics, 49(7), 1206, 2005 |
| 10 |
Compact modeling of transient substrate current of MOSFET Lee WK, Ng AFL, Tang JJ, Chan M Solid-State Electronics, 49(8), 1405, 2005 |