검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
TEM (XHREM) and EDX studies of 6H-SiC porous layer as a substrate for subsequent homoepitaxial growth Sorokin LM, Hutchison JL, Sloan J, Mosina GN, Savkina NS, Shuman VB, Lebedev AA Materials Science Forum, 389-3, 271, 2002 |
| 2 |
Role of the defects under porous silicon carbide formation Savkina NS, Sorokin LM, Hutchison JL, Sloan J, Tregubova AS, Mosina GN, Shuman VB, Ratnikov VV Applied Surface Science, 184(1-4), 252, 2001 |