| 1 |
Analysis of crack-free surface generation of photovoltaic polysilicon wafer cut by diamond wire saw
Yin YK, Gao YF, Wang LY, Zhang L, Pu TZ
Solar Energy, 216, 245, 2021 |
| 2 |
Molecular dynamics and experimental study on comparison between static and dynamic ploughing lithography of single crystal copper
Xiao GB, He Y, Geng YQ, Yan YD, Ren MJ
Applied Surface Science, 463, 96, 2019 |
| 3 |
Hard particle effect on surface generation in nano-cutting
Xu FF, Fang FZ, Zhang XD
Applied Surface Science, 425, 1020, 2017 |
| 4 |
A shape design problem in determining the interfacial surface of two bodies based on the desired system heat flux
Huang CH, Wuchiu CT
International Journal of Heat and Mass Transfer, 54(11-12), 2514, 2011 |
| 5 |
Measurement of generation parameters on Ru/HfO2/Si MOS capacitor
Tapajna M, Harmatha L, Husekova K
Solid-State Electronics, 50(2), 177, 2006 |
| 6 |
Comparison of charge-retention times in n- and p-type 4H-SiC MOS capacitors as non-volatile memory elements
Cheong KY, Dimitrijev S, Han J
Journal of Crystal Growth, 268(3-4), 547, 2004 |
| 7 |
The SiC-SiO2 interface: A unique advantage of SiC as a wide energy-gap material
Dimitrijev S
Materials Science Forum, 457-460, 1263, 2004 |
| 8 |
Characterization of non-equilibrium charge of MOS capacitors on p-type 4H SiC
Cheong KY, Dimitrijev S, Han J
Materials Science Forum, 457-460, 1365, 2004 |
| 9 |
Determining the generation lifetime in a MOS capacitor using linear sweep techniques
Tapajna M, Harmatha L
Solid-State Electronics, 48(12), 2339, 2004 |
| 10 |
Evaluation of surface generation velocity of sidewall oxide interfaces formed by dry etching for shallow trench isolation
Riley LS, Hall S, Schitz J
Solid-State Electronics, 44(11), 2093, 2000 |
