검색결과 : 4건
No. | Article |
---|---|
1 |
Measurement of generation parameters on Ru/HfO2/Si MOS capacitor Tapajna M, Harmatha L, Husekova K Solid-State Electronics, 50(2), 177, 2006 |
2 |
Characterization of non-equilibrium charge of MOS capacitors on p-type 4H SiC Cheong KY, Dimitrijev S, Han J Materials Science Forum, 457-460, 1365, 2004 |
3 |
Determining the generation lifetime in a MOS capacitor using linear sweep techniques Tapajna M, Harmatha L Solid-State Electronics, 48(12), 2339, 2004 |
4 |
Evaluation of surface generation velocity of sidewall oxide interfaces formed by dry etching for shallow trench isolation Riley LS, Hall S, Schitz J Solid-State Electronics, 44(11), 2093, 2000 |