화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Measurement of generation parameters on Ru/HfO2/Si MOS capacitor
Tapajna M, Harmatha L, Husekova K
Solid-State Electronics, 50(2), 177, 2006
2 Characterization of non-equilibrium charge of MOS capacitors on p-type 4H SiC
Cheong KY, Dimitrijev S, Han J
Materials Science Forum, 457-460, 1365, 2004
3 Determining the generation lifetime in a MOS capacitor using linear sweep techniques
Tapajna M, Harmatha L
Solid-State Electronics, 48(12), 2339, 2004
4 Evaluation of surface generation velocity of sidewall oxide interfaces formed by dry etching for shallow trench isolation
Riley LS, Hall S, Schitz J
Solid-State Electronics, 44(11), 2093, 2000