| 1 |
Surface orientation effects on bubble behaviors and critical heat flux mechanism in saturated water pool
Tanjung EF, Jo D
International Journal of Heat and Mass Transfer, 133, 179, 2019 |
| 2 |
Pool boiling critical heat flux (CHF) - Part 1: Review of mechanisms, models, and correlations
Liang GT, Mudawar I
International Journal of Heat and Mass Transfer, 117, 1352, 2018 |
| 3 |
Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials
Krivec S, Poljak M, Suligoj T
Solid-State Electronics, 115, 109, 2016 |
| 4 |
Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs
Koyama M, Casse M, Barraud S, Ghibaudo G, Iwai H, Faynot O, Rehnbold G
Solid-State Electronics, 108, 36, 2015 |
| 5 |
Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain
Chang PY, Liu XY, Zeng L, Du G
Solid-State Electronics, 113, 68, 2015 |
| 6 |
Saturated pool boiling from carbon nanotube coated surfaces at different orientations
Ho JY, Leong KC, Yang C
International Journal of Heat and Mass Transfer, 79, 893, 2014 |
| 7 |
Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure
Kawanago T, Kakushima K, Ahmet P, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H
Solid-State Electronics, 84, 53, 2013 |
| 8 |
A theoretical CHF model for downward facing surfaces and gaps under saturated boiling
Yu HX, Zhang YP, Su GH, Qiu SZ, Tian WX
International Journal of Multiphase Flow, 45, 30, 2012 |
| 9 |
Selective Hydrogenation of Cinnamaldehyde over (111) Preferentially Oriented Pt Particles Supported on Expanded Graphite
Ramos-Fernandez EV, Ramos-Fernandez JM, Martinez-Escandell M, Sepulveda-Escribano A, Rodriguez-Reinoso F
Catalysis Letters, 133(3-4), 267, 2009 |
| 10 |
Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (100) and (110) silicon surfaces
Ashraf MK, Khan AI, Haque A
Solid-State Electronics, 53(3), 271, 2009 |
