화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine
Shenai DV, Timmons ML, DiCarlo RL, Marsman CJ
Journal of Crystal Growth, 272(1-4), 603, 2004
2 High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers
Dong JR, Teng JH, Chua SJ, Wang YJ, Foo BC, Yuan HR, Yuan S
Journal of Crystal Growth, 253(1-4), 161, 2003
3 Expanded self-limiting growth condition of InP using alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum
Otsuka N, Nishizawa J, Kikuchi H, Oyama Y
Journal of Crystal Growth, 209(2-3), 252, 2000
4 Effects of organic As-precursors on the incorporation of In and Ga into (GaIn)As films grown by metal-organic vapor-phase epitaxy
Kirpal G, Gerhardt M, Gottschalch V, Franzheld R, Semmelhack HC
Thin Solid Films, 342(1-2), 113, 1999
5 Growth and properties of nonperiodic multiple thin films
Sasaki A
Thin Solid Films, 306(2), 346, 1997