화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Evolution of the Al2O3/Ge(100) interface for reactively sputter-deposited films submitted to postdeposition anneals
Bom NM, Soares GV, Krug C, Pezzi RP, Baumvol IJR, Radtke C
Applied Surface Science, 258(15), 5707, 2012
2 Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation
Cico K, Gregusova D, Kuzmik J, Jurkovic M, Alexewicz A, Poisson MAD, Pogany D, Strasser G, Delage S, Frohlich K
Solid-State Electronics, 67(1), 74, 2012
3 Surface morphology study on chromium oxide growth on Cr films by Nd-YAG laser oxidation process
Dong QZ, Hu JD, Guo ZX, Lian JS, Chen JW, Chen B
Applied Surface Science, 202(1-2), 114, 2002