화학공학소재연구정보센터
검색결과 : 42건
No. Article
1 High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
Zhou SJ, Xu HH, Hu HP, Gui CQ, Liu S
Applied Surface Science, 471, 231, 2019
2 Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer
Ke WC, Liang ZY, Tesfay ST, Chiang CY, Yang CY, Chang KJ, Lin JC
Applied Surface Science, 494, 644, 2019
3 Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model
Sharbati S, Gharibshahian I, Orouji AA
Solar Energy, 188, 1, 2019
4 Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers
Mansoori A, Addamane SJ, Renteria EJ, Shima DM, Behzadirad M, Vadiee E, Honsberg C, Balakrishnan G
Solar Energy Materials and Solar Cells, 185, 21, 2018
5 Growth of SiC single crystals on patterned seeds by a sublimation method
Yang XL, Chen XF, Peng Y, Xu XG, Hu XB
Journal of Crystal Growth, 439, 7, 2016
6 Simulation study of GaAsP/Si tandem solar cells
Onno A, Harder NP, Oberbeck L, Liu HY
Solar Energy Materials and Solar Cells, 145, 206, 2016
7 Defect reduction in GaN regrown on hexagonal mask structure by facet assisted lateral overgrowth
Jazi MA, Meisch T, Klein M, Scholz F
Journal of Crystal Growth, 429, 13, 2015
8 고각 환형 암시야 주사투과전자현미경기법과 투과전자현미경기법을 이용한 상용 청색 발광다이오드의 종합적인 구조분석
김동엽, 홍순구, 정태훈, 이상헌, 백종협
Korean Journal of Materials Research, 25(1), 1, 2015
9 Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates
Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM
Journal of Crystal Growth, 387, 16, 2014
10 High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure
Lazarev S, Bauer S, Forghani K, Barchuk M, Scholz F, Baumbach T
Journal of Crystal Growth, 370, 51, 2013