1 |
High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes Zhou SJ, Xu HH, Hu HP, Gui CQ, Liu S Applied Surface Science, 471, 231, 2019 |
2 |
Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer Ke WC, Liang ZY, Tesfay ST, Chiang CY, Yang CY, Chang KJ, Lin JC Applied Surface Science, 494, 644, 2019 |
3 |
Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model Sharbati S, Gharibshahian I, Orouji AA Solar Energy, 188, 1, 2019 |
4 |
Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers Mansoori A, Addamane SJ, Renteria EJ, Shima DM, Behzadirad M, Vadiee E, Honsberg C, Balakrishnan G Solar Energy Materials and Solar Cells, 185, 21, 2018 |
5 |
Growth of SiC single crystals on patterned seeds by a sublimation method Yang XL, Chen XF, Peng Y, Xu XG, Hu XB Journal of Crystal Growth, 439, 7, 2016 |
6 |
Simulation study of GaAsP/Si tandem solar cells Onno A, Harder NP, Oberbeck L, Liu HY Solar Energy Materials and Solar Cells, 145, 206, 2016 |
7 |
Defect reduction in GaN regrown on hexagonal mask structure by facet assisted lateral overgrowth Jazi MA, Meisch T, Klein M, Scholz F Journal of Crystal Growth, 429, 13, 2015 |
8 |
고각 환형 암시야 주사투과전자현미경기법과 투과전자현미경기법을 이용한 상용 청색 발광다이오드의 종합적인 구조분석 김동엽, 홍순구, 정태훈, 이상헌, 백종협 Korean Journal of Materials Research, 25(1), 1, 2015 |
9 |
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM Journal of Crystal Growth, 387, 16, 2014 |
10 |
High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure Lazarev S, Bauer S, Forghani K, Barchuk M, Scholz F, Baumbach T Journal of Crystal Growth, 370, 51, 2013 |