검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping Zhang RY, Wang W, Zhou F, Bian J, Zhao LJ, Zhu HL, Jian SS Materials Science Forum, 475-479, 1663, 2005 |
| 2 |
Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy Yoshikane T, Urakami A, Koizumi A, Hisadome S, Tabuchi M, Inoue K, Fujiwara Y, Takeda Y Applied Surface Science, 237(1-4), 246, 2004 |
| 3 |
Luminescence Characterization of In0.12Ga0.88As0.34P0.66 Grown on Gaas0.61P0.39 Substrates by Liquid-Phase Epitaxy Chen CW, Wu MC, Yeh YH Journal of the Electrochemical Society, 141(8), 2211, 1994 |