검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate Hjelmgren H, Andersson K, Eriksson J, Nilsson PA, Sudow M, Rorsman N Solid-State Electronics, 51(8), 1144, 2007 |
| 2 |
Optimisation of heterostructure bipolar transistors in SiC Chen CC, Horsfall AB, Wright NG, O'Neill AG Materials Science Forum, 483, 913, 2005 |
| 3 |
Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times Eberhardt J, Kasper E Solid-State Electronics, 45(12), 2097, 2001 |
| 4 |
Physical simulations on the operation of 4H-SiC microwave power transistors Jonsson R, Wahab Q, Rudner S Materials Science Forum, 338-3, 1263, 2000 |
| 5 |
TCAD evaluation of double implanted 4H-SiC power bipolar transistors Adachi K, Johnson CM, Ortolland S, Wright NG, O'Neill AG Materials Science Forum, 338-3, 1419, 2000 |