| 1 |
The impact of stress-induced defects on MOS electrostatics and short-channel effects
Esqueda IS
Solid-State Electronics, 103, 167, 2015 |
| 2 |
A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits
Esqueda IS, Barnaby HJ
Solid-State Electronics, 91, 81, 2014 |
| 3 |
Synthesis, electropolymerization and oxidation kinetics of an anthraquinone-functionalized poly(3,4-ethylenedioxythiophene)
Arias-Pardilla J, Otero TF, Blanco R, Segura JL
Electrochimica Acta, 55(5), 1535, 2010 |
| 4 |
Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs
Cheng B, Roy S, Brown AR, Millar C, Asenov A
Solid-State Electronics, 53(7), 767, 2009 |
| 5 |
Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs
Aleksic SM, Jaksic AB, Pejovic MM
Solid-State Electronics, 52(8), 1197, 2008 |
| 6 |
Synthesis and characterization of organic/inorganic heterostructure films for hybrid light emitting diode
Toyama T, Ichihara T, Yamaguchi D, Okamoto H
Applied Surface Science, 254(1), 295, 2007 |
| 7 |
Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing
Ristic GS, Pejovic MM, Jaksic AB
Applied Surface Science, 252(8), 3023, 2006 |
| 8 |
Thermoelectrets from poly(acrylonitrile) thin films: a trapped charge stability study
Marat-Mendes JN, Neagu ER
Materials Science Forum, 514-516, 925, 2006 |
| 9 |
Impact of scattering in'atomistic' device simulations
Alexander C, Brown AR, Watling JR, Asenov A
Solid-State Electronics, 49(5), 733, 2005 |
| 10 |
Fowler-Nordheim high electric field stress of power VDMOSFETs
Ristic GS, Pejovic MM, Jaksic AB
Solid-State Electronics, 49(7), 1140, 2005 |
